etching

AURA-WAVE (Sairem)

Materials / Surfaces
Plasma Chemical Processes

AURA-WAVE is an Electron Cyclotron Resonance (ECR) coaxial plasma source. It has been designed to be self-adapted once the plasma ignited. A magnetic field combined to the electromagnetic wave allows the creation of plasma at low pressure due to Electron Cyclotron Resonance. AURA-WAVE microwave plasma source has been designed to sustain microwave plasma over several decades of pressure, i.e. from 10⁻⁴ mbar to a few 10⁻² mbar and from a few watts depending on the gas.

On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes

The temporal behavior of the molecular etching product SiF4 in fluorocarbon-based plasmas used for the dry etching of ultra low-k (ULK) materials has been brought into connection with the polymer deposition on the surface during plasma treatment within the scope of this work. For this purpose, the density of SiF4 has been measured time-resolved using quantum cascade laser absorption spectroscopy (QCLAS).

Materials / Surfaces
Plasma Chemical Processes