On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 0 sccm)

Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 0 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

node194_Fig4_Ar0.csv

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Field	Value
mimetype	text/csv
filesize	171 bytes
resource type	file upload
timestamp	May 25, 2020

Field

Value

mimetype

text/csv

filesize

171 bytes

resource type

file upload

timestamp

May 25, 2020

Resource filetype	csv
Resource datatype	data table
Resource range	Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 0 sccm
Resource quality	published

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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 0 sccm)

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