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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 50 sccm)

Comparison of normalized etching rate and mean SiF4 densities as a function of the F/C ratio for Ar gas flow rate of 50 sccm. The linearity proves a strong correlation between etch product density and etching rate – see Fig. 4 in the publication.

node194_Fig4_Ar50.csv
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FieldValue
mimetypetext/csv
filesize115 bytes
resource typefile upload
timestampMay 25, 2020
Resource filetype csv
Resource datatype data table
Resource range Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 50 sccm
Resource quality published