On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 50 sccm) | INPTDAT

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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 50 sccm)

Effect of different process gas mixtures on the polymer thickness, the damage depth and the refractive index, respectively for Ar gas flow rate of 50 sccm – see Fig. 8 in the publication.

node194_Fig8_Ar50.csv

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On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 3
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 0 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 25 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 50 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 4 (Ar = 75 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 5
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.5)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.25)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3.75)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 3)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 6 (F/C = 4)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 0 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 25 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 50 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 7 (Ar = 75 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 0 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 25 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 50 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 8 (Ar = 75 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 0 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 25 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 50 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 9 (Ar = 75 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 10
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 0 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 25 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 50 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 11 (Ar = 75 sccm)
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 12
On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes - Fig. 13

Additional Information

Field	Value
mimetype	text/csv
filesize	211 bytes
resource type	file upload
timestamp	May 25, 2020

Resource filetype	csv
Resource datatype	data table
Resource range	Total pressure: 100 mTorr; RF power: 600 W; Ar gas flow rate: 50 sccm
Resource quality	published